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NTR4502P, NVTR4502P
Power MOSFET
? 30 V, ? 1.95 A, Single, P ? Channel,
SOT ? 23
Features
? Leading Planar Technology for Low Gate Charge / Fast Switching
? Low R DS(ON) for Low Conduction Losses
? SOT ? 23 Surface Mount for Small Footprint (3 X 3 mm)
? AEC Q101 Qualified ? NVTR4502P
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? DC to DC Conversion
? Load/Power Switch for Portables and Computing
? Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
? Battery Charging Circuits
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
? 30 V
G
http://onsemi.com
R DS(on) TYP I D Max (Note 1)
155 m W @ ? 10 V
? 1.95 A
240 m W @ ? 4.5 V
P ? Channel MOSFET
S
Parameter
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Symbol
V DSS
V GS
Value
? 30
± 20
Unit
V
V
D
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain Current (Note 1)
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
t < 10 s T A = 25 ° C
T A = 70 ° C
t < 10 s
Steady T A = 25 ° C
State
T A = 70 ° C
Steady State
I D
P D
I D
P D
? 1.95
? 1.56
1.25
? 1.13
? 0.90
0.4
A
W
A
W
SOT ? 23
CASE 318
STYLE 21
TR2
M
G
Drain
3
TR2 M G
G
Gate Source
= Device Code
= Date Code*
= Pb ? Free Package
1 2
Pulsed Drain Current
t p = 10 m s
I DM
? 6.8
A
(Note: Microdot may be in either location)
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
T J ,
T STG
I S
T L
? 55 to
150
? 1.25
260
° C
A
° C
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
NTR4502PT1G
SOT ? 23
(Pb ? Free)
3000 / Tape & Reel
Junction ? to ? Ambient – Steady State (Note 1) R q JA 300 ° C/W
Junction ? to ? Ambient – t = 10 s (Note 1) R q JA 100
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
NVTR4502PT1G SOT ? 23 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
August, 2011 ? Rev. 5
1
Publication Order Number:
NTR4502P/D
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相关代理商/技术参数
NTR4502PT3 功能描述:MOSFET -30V -1.95A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4502PT3G 功能描述:MOSFET -30V -1.95A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4503N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 2.5 A, Single N−Channel, SOT−23
NTR4503NST1G 制造商:ON Semiconductor 功能描述:NFET SOT23 30V 2.5A 140MO - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NFET SOT23 30V 2.5A 140MO
NTR4503NT1 功能描述:MOSFET 30V 2.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4503NT1G 功能描述:MOSFET 30V 2.5A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4503NT1G-CUT TAPE 制造商:ON 功能描述:NTR Series N-Channel 20 V 85 mOhm 0.73 W Surface Mount Power MOSFET - SOT-23
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